04/28
TFT on Silicon
Introduction
·Amorphous silicon (a-Si) transistor's mobility is <1
(electron) and <0.1 (hole) cm2/Vs, good enough for LCD
(1080p) but not good enough for 4K2K.
(Laser annealed (a special process) a-Si is 50-150
(electron) cm2/Vs.)
·Poly silicon (p-Si) transistor's mobility is <500 (electron)
and <300 (hole) cm2/Vs.
·Crystalline silicon (c-Si) transistor's mobility is <1400
(electron) and <450 (hole) cm2/Vs.
·IGZO shows 10-30 cm2/Vs, is an alternative to Si.

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