07/28
TFT on Silicon
Introduction
·Major thermal energy (temperature) applied on Si comes
from
·Thermal oxidation (>1000 oC), and
·Diffusion (>600 oC),
are too high for polymer substrate.
·Plastics' low temperature limit also severely restricts the
process parameters of
·Plasma deposition (high energy operation),
·Photolithography (chemical operation).

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