08/28
TFT on Silicon
Fundamental Issue
·Conventional PECVD (plasma enhanced chemical vapor
deposition) for Si growth temperature in display industry is
in the range of 200-300 .
·Drawbacks for temperature below 150 °C:
·Defect (dangling Si bond) increases,
Si density decreases,
Si-H, Si-OH, and Si-O increases,
Poor electrical property.
·Doping efficiency decreases.
high charge trapping, reduced mobility
Poor electrical property.

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