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TFT on Silicon
Low Temperature Dielectric
·At low deposition temperatures, the leakage current
through dielectric increase rapidly due to low density.
·To compensate, high-density plasma system can be used:
·Radio frequency (RF) PECVD,
·Electron cyclotron resonance (ECR)-based
deposition.
·Drawback of the compensation:
·Very limited process area with good.

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