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TFT on Silicon
Low Temperature TFT Device: a-Si
·In TFT's ON state, it can be represented by a series of the
channel resistance (Rch) and the S/D resistance (RDS):
·The Rch is the function of the channel length, where RDS
does not depend on the channel L:
· In the case of long channel, Rch>> RDS and the
mobility value is not affected by RDS.
· In the case of short channel, the extracted mobility
value is lower than the true field-effect mobility.

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