Summary
·Low-temp. process (75-250°C) for a-Si or nc-Si is
possible, but,
·Reduced performance in S, , VT, and many more,
·Thus,
· Channel (Si) engineering, and
· Dielectric (SiN , SiO ) engineering
x
x
are required,
to fabricate Si as TFT on plastic substrate for flexible
electronics.

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